ECE 7831
Transcript Abbreviation:
Microwave Sem Dev
Course Description:
Principles of microwave semiconductor devices; scattering and high-field transport; Gunn effect; FET wave equation, HEMT; HBT; large signal RF modeling and measurements; noise; traps; self-heating.
Course Levels:
Graduate
Designation:
Elective
General Education Course:
(N/A)
Cross-Listings:
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours:
3.00
Select if Repeatable:
Off
Maximum Repeatable Credits:
(N/A)
Total Completions Allowed:
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: Grad standing in Engr or Physics.
Electronically Enforced:
No
Exclusions:
(N/A)
Course Goals / Objectives:
Provide a detailed understanding of the operation of classical and quantum heterostructure devices and their high-frequency (radio frequency) response
Review semi-classical theories of heterostructure devices and their application to the PN heterojunction and the HBT
Discuss resonant tunneling diodes and superlattices and their high frequency response
Provide an understanding of the scattering processes contributing to transport in heterostructures including processes such as scattering-assisted resonant tunneling
Discuss high field transport, velocity overshoot, velocity saturation and the Gunn effect and the consequences on the operation of Gunn diodes, HEMTs and HBTs
Discuss the physical operation of HEMTs and HBTs including two-dimensional effects and short-channel effects, and the development of high-frequency small- and large-signal electro-thermal models
Measurement and modeling techniques of small and large signal RF response and noise processes in microwave devices and the characterization of memory effects such as traps, self-heating and cyclo stationary effects
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC | LAB | LAB Inst |
|---|---|---|---|---|
| Review of semiconductor fundamentals | 2.0 | 0.0 | 0.0 | 0 |
| Semi-classical theory of heterostructures | 3.0 | 0.0 | 0.0 | 0 |
| Quantum theory of heterostructures | 3.0 | 0.0 | 0.0 | 0 |
| Quantum heterostructure devices | 3.0 | 0.0 | 0.0 | 0 |
| Scattering processes in heterostructures | 3.0 | 0.0 | 0.0 | 0 |
| 3D scattering-assisted tunneling | 3.0 | 0.0 | 0.0 | 0 |
| High-frequency response of quantum devices | 3.0 | 0.0 | 0.0 | 0 |
| Charge control of the two-dimensional electron gas | 3.0 | 0.0 | 0.0 | 0 |
| Current voltage model of HEMTs | 3.0 | 0.0 | 0.0 | 0 |
| FET wave equation and small and large signal AC models of HEMTs | 3.0 | 0.0 | 0.0 | 0 |
| Noise modeling and measurement in HEMTs. Cyclo stationary effects | 3.0 | 0.0 | 0.0 | 0 |
| Measurement and characterization of parasitics. HEMT device optimization | 3.0 | 0.0 | 0.0 | 0 |
| Microscopic and compact modeling of HBTs and practical device optimization | 3.0 | 0.0 | 0.0 | 0 |
| Modeling and characterization of memory effects including traps and self-heating that impact the RF performance of RF devices | 4.0 | 0.0 | 0.0 | 0 |
| Total | 42 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Homework | 25% |
| Midterm | 25% |
| Final exam | 25% |
| Term paper | 25% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| High Speed Heterostructure Devices | Patrick Roblin |
ABET-CAC Criterion 3 Outcomes:
(N/A)
ABET-ETAC Criterion 3 Outcomes:
(N/A)
ABET-EAC Criterion 3 Outcomes:
(N/A)
Embedded Literacies Info:
Attachments:
(N/A)
Additional Notes or Comments:
(N/A)
Basic Course Overview:
ECE_7831_basic.pdf
(11.68 KB)