ECE 7531
Transcript Abbreviation:
Epitax Heterostr
Course Description:
Science and techniques behind thin film growth and engineering for combining different materials, altering chemical composition at the nanometer scale, while controlling defects and strain. Epitaxial crystal growth will be explained. Students will gain an understanding of the kinetics, thermodynamics, and technology involved in epitaxial heterostructures and self-assembled nanostructures.
Course Levels:
Graduate
Designation:
Elective
General Education Course:
(N/A)
Cross-Listings:
Cross-listed in MSE.
Credit Hours (Minimum if “Range”selected):
2.00
Max Credit Hours:
2.00
Select if Repeatable:
Off
Maximum Repeatable Credits:
(N/A)
Total Completions Allowed:
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: Grad standing.
Electronically Enforced:
No
Exclusions:
Not open to students with credit for MSE 7531
Course Goals / Objectives:
Develop a technical knowledge of vacuum science
Develop a working knowledge of thin film characterization techniques
Students will gain an understanding of kinetics and thermodynamics of thin film / epitaxial growth
Introduce students to advanced impurity doping techniques and limits therein
Students will gain a working knowledge of advanced electronic and optical design tools especially quantum confined and nanostructures.
Students will demonstrate analytical ability in reviewing case studies from scientific literature on the topic of epitaxial heterostructures.
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC | LAB | LAB Inst |
|---|---|---|---|---|
| Intro to Vacuum science: pumps, gauges, mean free path, baking | 2.0 | 0.0 | 0.0 | 0 |
| Standard epitaxial characterization: RHEED, HRXRD, AFM | 2.0 | 0.0 | 0.0 | 0 |
| Thin film kinetics versus thermodynamics | 2.0 | 0.0 | 0.0 | 0 |
| Comparing growth methods (MBE versus MOCVD, sputtering, PLD) | 2.0 | 0.0 | 0.0 | 0 |
| Adatom mobility, sticking coefficient, surface diffusion | 2.0 | 0.0 | 0.0 | 0 |
| Growth modes: Volmer-Weber, Stranski-Krastinow, Frank–van der Merwe | 2.0 | 0.0 | 0.0 | 0 |
| Misfit, threading dislocations, strain relaxation (critical thickness) | 2.0 | 0.0 | 0.0 | 0 |
| Impurity doping: techniques, calibration, uniformity, incorporation during growth, diffusion, amphotericity and autocompensation | 2.0 | 0.0 | 0.0 | 0 |
| Advanced electronic/optical design tools: quantum wells, modulation doping, polarization doping | 2.0 | 0.0 | 0.0 | 0 |
| Digital superlattices, DBRs, multi quantum wells | 2.0 | 0.0 | 0.0 | 0 |
| Self-assembled nanostructures: quantum dots, nanowires | 2.0 | 0.0 | 0.0 | 0 |
| Case studies: Limited solubility and metastable phases, GaMnAs | 2.0 | 0.0 | 0.0 | 0 |
| Case studies: Epitaxy of dissimilar materials, ErAs/GaAs | 2.0 | 0.0 | 0.0 | 0 |
| Case studies: nanowire heterostructures, strain accommodation | 2.0 | 0.0 | 0.0 | 0 |
| Total | 28 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Weekly quizzes | 50% |
| In-class presentation | 25% |
| Final report | 25% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| Epitaxy of Semiconductors: Introduction to Physical Principles | Udo W. Pohl |
ABET-CAC Criterion 3 Outcomes:
(N/A)
ABET-ETAC Criterion 3 Outcomes:
(N/A)
ABET-EAC Criterion 3 Outcomes:
(N/A)
Embedded Literacies Info:
Attachments:
(N/A)
Additional Notes or Comments:
(N/A)
Basic Course Overview:
ECE_7531_basic.pdf
(11.61 KB)