ECE 6531
Transcript Abbreviation:
Fund Semicond Dev
Course Description:
An overview of the physics, design, and engineering of semiconductor electronic and optoelectronic devices. Applications of silicon, compound semiconductor, and nanotechnology will be covered.
Course Levels:
Graduate (5000-8000 level)
Designation:
Elective
General Education Course:
(N/A)
Cross-Listings:
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours:
3.00
Select if Repeatable:
Off
Maximum Repeatable Credits:
(N/A)
Total Completions Allowed:
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: 5530 (730), or permission of instructor.
Electronically Enforced:
No
Exclusions:
Not open to students with credit for 5531.
Course Goals / Objectives:
Learn advanced semiconductor device physics.
Learn to design semiconductor devices.
Learn performance limits of state-of-the-art semiconductor devices and approaches for overcoming them.
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC out-of-class | REC in-class | Weekly LAB out-of-class | Weekly LAB in-class |
|---|---|---|---|---|---|
| Device applications of semiconductors | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Transport in heterojunctions | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Photodiodes and optoelectronic integrated circuits | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Solar cells - an introduction | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Light emitting diodes | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Laser diodes - an introduction | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Heterojunction FET - HEMT | 5.0 | 0.0 | 0 | 0.0 | 0 |
| Long-channel MOSFET models | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Sub-micron MOSFET - threshold volt, sub-threshold current, scaling, hot carriers | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Bipolar junction transistors | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Heterojunction bipolar transistors | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Tunnel diodes, resonant tunneling diodes | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Wide-bandgap semiconductors - transport physics and optical properties | 3.0 | 0.0 | 0 | 0.0 | 0 |
| High-frequency and high power wide-bandgap electronics | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Optical devices based on wide-bandgap semiconductors | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Total | 40 | 0 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Homework | 20% |
| Two mid-term examinations | 40% |
| Final examination | 40% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| Semiconductor Device Physics and Design | Umesh Mishra and Jasprit Singh |
ABET-CAC Criterion 3 Outcomes:
(N/A)
ABET-ETAC Criterion 3 Outcomes:
(N/A)
ABET-EAC Criterion 3 Outcomes:
(N/A)
Embedded Literacies Info: