ECE 5244
Transcript Abbreviation:
Si/WBG Power Dev
Course Description:
Basic design and operation of Si and Wide Band Gap (WBG: SiC, GaN and ultra wide band gap semiconductors) power devices and the applications of commercial devices in power electronics applications. Trade-offs between various devices. Static and dynamic operation. Comparison of Si and SiC devices and design differences.
Course Levels:
Undergraduate (1000-5000 level)
Graduate (5000-8000 level)
Designation:
Elective
General Education Course:
(N/A)
Cross-Listings:
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours:
(N/A)
Select if Repeatable:
Off
Maximum Repeatable Credits:
(N/A)
Total Completions Allowed:
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Distance Learning (100% online)
Prerequisites and Co-requisites:
Prereq: 3030, or Grad standing in Engr or Physics.
Electronically Enforced:
No
Exclusions:
Not open to students with credit for 5194.07 or 5234.
Course Goals / Objectives:
Provide an introduction to basic operation of Si and wide band gap power devices
Students master design principles of power devices
Students become competent with specifications of commercial power devices
tudents are exposed to the processing details of power devices
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC out-of-class | REC in-class | Weekly LAB out-of-class | Weekly LAB in-class |
|---|---|---|---|---|---|
| Introduction to basic power devices, characteristics and applications | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Material Properties of Si and wide band gap semiconductors | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Design for Breakdown Voltage – various edge terminations | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Ideal Specific On-Resistance for Si and WBG device | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Schottky Diodes: Forward conduction and reverse blocking | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Design of Schottky Diodes | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Commercial specifications of Schottky Diodes | 1.0 | 0.0 | 0 | 0.0 | 0 |
| PiN Diodes: Forward conduction and reverse blocking | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Design of PiN Diodes | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Commercial specifications of PiN Diodes | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Planar power MOSFETs: Forward conduction and forward blocking | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Channel mobility | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Design of Si and SiC planar power MOSFETs | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Dynamic operation | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Unclamped inductive switching and short circuit time | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Latch up and Safe Operating Area (SOA) | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Commercial specifications of Si and SiC planar power MOSFETs | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Reliability issues | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Trench MOSFETs | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Super Junction MOSFETs | 1.0 | 0.0 | 0 | 0.0 | 0 |
| GaN and Ultra WBG Lateral Power HFETs | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Si and SiC IGBTs: Structure and Operation | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Symmetric and Asymmetric designs | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Forward conduction | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Forward blocking | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Dynamic operation and dependence on lifetime | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Latch up and Safe Operating Area (SOA) | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Design and processing of SiC power devices | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Total | 40 | 0 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Hoemwork | 40% |
| Midterm | 30% |
| Final | 30% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| Gallium Nitride and Silicon Carbide Power Devices | Jayant B |
ABET-CAC Criterion 3 Outcomes:
(N/A)
ABET-ETAC Criterion 3 Outcomes:
(N/A)
ABET-EAC Criterion 3 Outcomes:
| Substantial contribution (3-6 hours) | 1 | an ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics |
| Substantial contribution (3-6 hours) | 2 | an ability to apply engineering design to produce solutions that meet specified needs with consideration of public health, safety, and welfare, as well as global, cultural, social, environmental, and economic factors |
| Some contribution (1-2 hours) | 6 | an ability to develop and conduct appropriate experimentation, analyze and interpret data, and use engineering judgment to draw conclusions |
| Some contribution (1-2 hours) | 7 | an ability to acquire and apply new knowledge as needed, using appropriate learning strategies |
Embedded Literacies Info: