ECE 3030
Transcript Abbreviation:
Electronic Devices
Course Description:
Semiconductor materials and devices. Crystals; bandstructure; charge carrier statistics; excess carriers, transport; PN junction; Schottky barrier; bipolar and field-effect transistors; optoelectronic devices; nanoscale devices.
Course Levels:
Undergraduate (1000-5000 level)
Designation:
Required
Elective
General Education Course:
(N/A)
Cross-Listings:
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours:
(N/A)
Select if Repeatable:
Off
Maximum Repeatable Credits:
(N/A)
Total Completions Allowed:
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: Physics 1251, 1261, or both 1240 and 1241; and Chem 1210, 1220, or 1250. Prereq or concur: Math 2415 or 2174.
Electronically Enforced:
No
Exclusions:
(N/A)
Course Goals / Objectives:
Be familiar with the fundamentals of material structure (crystal, amorphous, polycrystalline)
Be familiar with the fundamentals of quantum mechanics
Be competent in analyzing the relationships between the physical and electronic properties of semiconductors
Be familiar with the fundamental principles of operation of semiconductor devices
Master energy band diagram analysis
Be competent with pn junction device physics
Be exposed to a modern engineering simulation tool (2D device simulator)
Be familiar with necessary background to understand the principle of new electronic devices as new technologies develop
Be exposed to a modern engineering simulation tool (2D device simulator)
Be familiar with necessary background to understand the principle of new electronic devices as new technologies develop
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC out-of-class | REC in-class | Weekly LAB out-of-class | Weekly LAB in-class |
|---|---|---|---|---|---|
| Overview and motivation | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Microstructure & Crystal structure | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Electronic material synthesis, defects | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Principles of quantum mechanics | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Band structures | 3.0 | 0.0 | 0 | 0.0 | 0 |
| Semiconductor statistics and charge carrier properties | 4.0 | 0.0 | 0 | 0.0 | 0 |
| Excess carriers and transport | 3.0 | 0.0 | 0 | 0.0 | 0 |
| PN junction, metal-semiconductor junctions, Diodes | 6.0 | 0.0 | 0 | 0.0 | 0 |
| Field effect transistor (regular and HEMT) | 6.0 | 0.0 | 0 | 0.0 | 0 |
| Bipolar Junction Transistor (regular and hetero) | 7.0 | 0.0 | 0 | 0.0 | 0 |
| Optoelectronic Devices | 2.0 | 0.0 | 0 | 0.0 | 0 |
| Overview of new materials, devices, and techniques | 1.0 | 0.0 | 0 | 0.0 | 0 |
| Total | 40 | 0 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Homework | 15% |
| Simulation homework | 5% |
| Midterm 1 | 25% |
| Midterm 2 | 25% |
| Final exam | 30% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| Solid State Electronic Devices, 7th Edition | Ben G. Streetman and Sanjay Kumar Bannerjee, ISBN: 978 0 13 335603 8 |
ABET-CAC Criterion 3 Outcomes:
(N/A)
ABET-ETAC Criterion 3 Outcomes:
(N/A)
ABET-EAC Criterion 3 Outcomes:
| Substantial contribution (3-6 hours) | 1 | an ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics |
| Some contribution (1-2 hours) | 2 | an ability to apply engineering design to produce solutions that meet specified needs with consideration of public health, safety, and welfare, as well as global, cultural, social, environmental, and economic factors |
| Some contribution (1-2 hours) | 7 | an ability to acquire and apply new knowledge as needed, using appropriate learning strategies |
Embedded Literacies Info: