ECE 7032
Transcript Abbreviation:
Adv Semicond Dev
Course Description:
MOSCAPs, Gated Diode, CMOS Bulk/SOI Transistors, Photodiodes, Carrier Transport/Storage, Scaling, Mobility, CCDs, CMOS, EEPROMs, SiGe, SiC, ISFETs, BJTs, Noise and Modeling.
Course Levels:
Graduate
Designation:
Elective
General Education Course
(N/A)
Cross-Listings
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours:
3.00
Select if Repeatable:
Off
Maximum Repeatable Credits
(N/A)
Total Completions Allowed
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: 5530 (730) or 6531.
Electronically Enforced:
No
Exclusions:
Not open to students with credit for 894 (Spring 12, Class number 26147) or 8194.04.
Course Goals / Objectives:
Students learn about quantum effects of device scaling on performance and reliability
Students learn modeling of MOS transistors, CCDs, EEPROMs and other devices
Students learn measurement techniques for device characterization
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC | LAB | LAB Inst |
|---|---|---|---|---|
| Historical overview: MOSCAP, gated diode, high-K dielectrics, amphoteric traps | 7.0 | 0.0 | 0.0 | 0 |
| Generation-recombination theory, equilibrium, non-equilibrium, steady-state and non-steady-state, conductance, surface recombination boundary conditions | 4.0 | 0.0 | 0.0 | 0 |
| CCDs, carrier transport and operation, transfer efficiency, charge control model | 4.0 | 0.0 | 0.0 | 0 |
| CMOS transistors (bulk, SOI, mobility, transconductance, subthreshold operation, SPICE modeling, short-channel and narrow-width effects, surface and buried channel devices, propagation delay, ion-sensitive FETs (ISFETs), hot carrier injection | 7.0 | 0.0 | 0.0 | 0 |
| Charge pumping, interface and dielectric traps | 3.0 | 0.0 | 0.0 | 0 |
| Physics of tunneling- floating gate and SONOS EEPROMs | 4.0 | 0.0 | 0.0 | 0 |
| Theory of drift-field bipolar junction transistors (BJTs) | 4.0 | 0.0 | 0.0 | 0 |
| SiGe FETs and SiC devices | 3.0 | 0.0 | 0.0 | 0 |
| Advanced research topics (e.g. mobility, surface roughness, Coulomb scattering, noise) | 3.0 | 0.0 | 0.0 | 0 |
| Total | 39 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Homework | 60% |
| Midterm Exam | 20% |
| Final exam | 20% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| Course notes and selected papers from the literature |
ABET-CAC Criterion 3 Outcomes
(N/A)
ABET-ETAC Criterion 3 Outcomes
(N/A)
ABET-EAC Criterion 3 Outcomes
(N/A)
Embedded Literacies Info
(N/A)
Attachments
(N/A)
Additional Notes or Comments
(N/A)