ECE 5530
Transcript Abbreviation:
Fnd Semiconductors
Course Description:
Crystal structure, semiconductor energy band structure, electron transport and carrier recombination, heterostructures, and optical and dielectric properties.
Course Levels:
Undergraduate (1000-5000 level)
Graduate
Designation:
Elective
General Education Course
(N/A)
Cross-Listings
(N/A)
Credit Hours (Minimum if “Range”selected):
3.00
Max Credit Hours
(N/A)
Select if Repeatable:
Off
Maximum Repeatable Credits
(N/A)
Total Completions Allowed
(N/A)
Allow Multiple Enrollments in Term:
No
Course Length:
14 weeks (autumn or spring)
12 weeks (summer only)
Off Campus:
Never
Campus Location:
Columbus
Instruction Modes:
In Person (75-100% campus; 0-24% online)
Prerequisites and Co-requisites:
Prereq: 3030 (432), or Grad standing in Engineering, Biological Sciences, or Math and Physical Sciences.
Electronically Enforced:
Yes
Exclusions:
Not open to students with credit for 730.
Course Goals / Objectives:
Become competent with quantum mechanics necessary to understand electronic properties of semiconductors
Gain mastery of concepts related to electrons in periodic potentials, and carrier statistics in 1D, 2D, and 3D systems
Become familiar with fundamentals of mathematical description of crystal structure and the reciprocal lattice
Master concepts related to doping and compensation in semiconductors
Gain competence in understanding excess carrier band to band, impurity, and Auger recombination in semiconductors
Mastery analysis of charge, field, and energy band profiles in semiconductor homojunctions, heterojunctions, and metal-semiconductor junctions
Gain competence in analysis of drift, diffusion, and ambipolar transport equations in semiconductors
Be exposed to tunneling, space-charge limited, and quantum transport in semicondcutors
Be familiar with non-equilibrium transport in semiconductor PN junctions and metal-semiconductor junctions
Check if concurrence sought:
No
Contact Hours:
| Topic | LEC | REC | LAB | LAB Inst |
|---|---|---|---|---|
| Motivation | 1.0 | 0.0 | 0.0 | 0 |
| Chemical bonding, crystallography, reciprocal lattice | 3.0 | 0.0 | 0.0 | 0 |
| Free electron model, Density of states (1D, 2D, 3D), periodic boundary conditions, plane-wave states | 3.0 | 0.0 | 0.0 | 0 |
| Nearly free electron model, Bloch theorem, periodic bandstructure and bandgap, band transport and effective mass, Fermi velocity and wavevector | 5.0 | 0.0 | 0.0 | 0 |
| Statistics and doping, Fermi Dirac distribution, density of states for ellipsoidal bands, electrons and holes, donors and acceptors, deep donors and acceptors | 3.0 | 0.0 | 0.0 | 0 |
| Electron transport, Boltzmann transport equation, excess carriers, recombination/generation, Ambipolar transport equation, drift diffusion equation, phonons, scattering | 3.0 | 0.0 | 0.0 | 0 |
| Relaxation time, velocity saturation, high-field transport, inter-valley scattering, ballistic transport | 2.0 | 0.0 | 0.0 | 0 |
| Surface defects and termination, electron affinity, ionization energy, work function, metal-semiconductor junctions, thermionic emission, tunneling | 4.0 | 0.0 | 0.0 | 0 |
| P-n junction, band diagram and electrostatics, depletion approximation and limitations, current in a p-n junction, high level injection, SRH recombination theory, recombination in a p-n junction | 5.0 | 0.0 | 0.0 | 0 |
| Heterojunctions, band diagrams and electrostatics, QW formation, 2DEG, quantum dots, occupation | 4.0 | 0.0 | 0.0 | 0 |
| Wide bandgap semiconductors, piezoelectric and spontaneous polarization, polarization-induced doping | 4.0 | 0.0 | 0.0 | 0 |
| Optical properties, absorption and emission, emission from quantum wells | 3.0 | 0.0 | 0.0 | 0 |
| Total | 40 | 0 | 0 | 0 |
Grading Plan:
Letter Grade
Course Components:
Lecture
Grade Roster Component:
Lecture
Credit by Exam (EM):
No
Grades Breakdown:
| Aspect | Percent |
|---|---|
| Homework | 20% |
| Design homework | 10% |
| Two mid-term examinations | 40% |
| Final examination | 30% |
Representative Textbooks and Other Course Materials:
| Title | Author | Year |
|---|---|---|
| The Physics of Low-Dimensional Semiconductors | John H. Davies |
ABET-CAC Criterion 3 Outcomes
(N/A)
ABET-ETAC Criterion 3 Outcomes
(N/A)
ABET-EAC Criterion 3 Outcomes
(N/A)
Embedded Literacies Info
(N/A)
Attachments
(N/A)
Additional Notes or Comments
(N/A)